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chemical etching method of a silicon substrate, chemically attacked silicon substrate, and rechargeable lithium cell

机译:硅基板的化学蚀刻方法,化学侵蚀的硅基板和可充电锂电池

摘要

B CHEMICAL ATTACK METHOD OF A SILICON SUB STRATE, CHEMICALLY ATTACKED SILICON SUBSTRATE, E, RECHARGEABLE LITHIUM CELL D A method for the selective chemical attack of a silicon substrate on small local areas to form columns is described or pillars on the surface that has undergone a chemical attack. The silicon substrate is kept in a chemical attack solution of hydrogen fluoride, a silver salt and an alcohol. The inclusion of alcohol produces a higher agglomeration density of the silicon columns.
机译:硅基板,化学键合的硅基板,E,可充电锂电池的化学攻击方法描述了在小局部区域上对硅基板进行选择性化学攻击以形成柱或在表面形成柱的方法遭受化学攻击硅基板保存在氟化氢,银盐和酒精的化学侵蚀溶液中。包含醇会产生较高的硅柱附聚密度。

著录项

  • 公开/公告号BRPI0707164A2

    专利类型

  • 公开/公告日2011-08-02

    原文格式PDF

  • 申请/专利权人 NEXEON LTD.;

    申请/专利号BR2007PI07164

  • 发明设计人 MINO GREEN;LIU FENGMING;

    申请日2007-01-23

  • 分类号H01L21/306;H01M10/36;

  • 国家 BR

  • 入库时间 2022-08-21 18:07:08

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