According to this invention, silicon-based photodetectors using waveguidesformed with silicide regions can have high speed and high efficiency for nearIR applications. Utilizing the unique properties of silicides, the proposedmethod provides a simple and elegant way to implement a photodetectordesign in which photogenerated carriers travel perpendicular to the directionof light propagation. Therefore, the speed and quantum efficiency of thephotodetector may be optimized independently. This device configurationmay be implemented in one of the two approaches: (a) waveguides formedthrough surface silicidation of a silicon-based layer of a substrate (b)waveguides formed through silicidation of ridge waveguide side-walls of asilicon-based layer of a substrate; The use of mature silicon technologypromises low cost of production and other benefits.
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