High Speed and High Efficiency AlInAs/GaInAs Waveguide Photodetectors for Use in 40-Gbps Applications

摘要

A separated-absorption-and-multiplication (SAM) AlInAs/GaInAs waveguide avalanche photodiode (APD) has been developed for 40-Gbps receivers. It has the widest bandwidth of 30-35 GHz and a gain-bandwidth product of 140-180 GHz, as a result of its small waveguide mesa structure and a thin 0.1μm thick avalanche layer. Preliminary results show the highest 10-Gbps sensitivity ever reported: -28. dBm at a bit-error-rate of 10~(-9). This waveguide APD is a candidate for 40-Gbps applications as a cost-effective super-efficient photodetector.