Improved Saturation Performance in High Speed Waveguide Photodetectors at 1.3 sing an Asymmetric InA1GaAs/InGaAsP Structure

摘要

Waveguide photodetector (WGPD) results have recently been presented demonstrating the very large bandwidth-efficiency product potential of these devices. Improved saturation and linearity characteristics are realized in waveguide p-i-n photodetectors at 1.3 y using an asymmetric cladding structure with InA1GaAs/InGaAsP in the anode and InGaAsP in the cathode.