High-Speed 1.3-$muhbox{m}$ p-i-n GaNAsSb/GaAs Waveguide Photodetector

摘要

The authors report the demonstration of high-speed GaNAsSb/GaAs $phbox{-}i hbox{-}n$ waveguide photodetector grown by molecular beam epitaxy technique. A 0.4- $muhbox{m}$-thick GaNAsSb core layer with 3.3% of N and 8% of Sb for detection wavelength over 1.3 $muhbox{m}$ is sandwiched by GaAs and AlGaAs cladding layers. The device exhibits a record value of cutoff frequency of 16.5 GHz.