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High-purity vitreous silica crucible used for pulling large-diameter single-crystal silicon ingot and manufacturing method

机译:用于拉制大直径单晶硅锭的高纯度玻璃硅坩埚及其制造方法

摘要

A high-purity vitreous silica crucible which has high strength and is used for pulling a Iarge-diameter single-crystal silicon ingot, includes a double laminated structure constituted by an outer layer composed of amorphous silica glass with a bubble content of 1 to 10% and a purity of 99.99% or higher and an inner layer composed of amorphous silica glass with a bubble content of 0.6% or less and a purity of 99.99% or higher, and in the portion between the upper opening end of the high-purity vitreous silica crucible and the ingot-pulling start line of a silicon melt surface in the step of pulling a single-crystal silicon ingot, a portion corresponding to 40 to 100 volume% from the upper opening end of the crucible is in a crystalline structure free from the crystallization promoter.A manufacturing method comprises adding a crystallization promoter to the silica raw material in a rim portion and cutting off the rim portion after part of the crucible has crystallized.
机译:具有高强度并用于拉制大直径单晶硅锭的高纯度玻璃石英坩埚,包括由由气泡含量为1%至10%的非晶硅玻璃组成的外层构成的双层结构在高纯度玻璃体的上开口端之间的部分中,纯度为99.99%以上,且气泡含量为0.6%以下且纯度为99.99%以上的非晶硅玻璃构成的内层。在拉制单晶硅锭的步骤中,石英坩埚和硅熔体表面的铸锭拉起起始线,从坩埚的上开口端起相当于40至100体积%的部分为无晶体结构。结晶促进剂。一种制造方法包括:在边缘部分中向二氧化硅原料中添加结晶促进剂,并在部分坩埚已结晶后将边缘部分切下。

著录项

  • 公开/公告号EP2070882B1

    专利类型

  • 公开/公告日2011-02-23

    原文格式PDF

  • 申请/专利权人 JAPAN SUPER QUARTZ CORP;

    申请/专利号EP20080020769

  • 发明设计人 SATOU TADAHIRO;

    申请日2008-11-28

  • 分类号C03B19/09;C30B15/10;C03C3/06;

  • 国家 EP

  • 入库时间 2022-08-21 17:57:54

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