首页> 外国专利> HIGH-PURITY VITREOUS SILICA CRUCIBLE USED FOR PULLING LARGE-DIAMETER SINGLE-CRYSTAL SILICON INGOT WHICH ENABLES REDUCTION OF PINHOLE DEFECT AMONG LARGE-DIAMETER SINGLE-CRYSTAL SILICON INGOT

HIGH-PURITY VITREOUS SILICA CRUCIBLE USED FOR PULLING LARGE-DIAMETER SINGLE-CRYSTAL SILICON INGOT WHICH ENABLES REDUCTION OF PINHOLE DEFECT AMONG LARGE-DIAMETER SINGLE-CRYSTAL SILICON INGOT

机译:用于拉大直径单晶硅锭的高纯度玻璃态二氧化硅坩埚,可减少大直径单晶硅锭中的销缺陷

摘要

the diameter ( ) for high purity silicon single crystal ingot impression quartz glass crucible , the bubble content: 1% or more and less than 10% , purity : 99.99 % or greater purity and an outer layer of amorphous silica glass , the bubble content of not more than 0.6% , purity: large-diameter silicon single crystal ingot having a layered structure of two or more of the 99% of the inner layer of high-purity amorphous silica glass as a high-purity quartz glass crucible for impression , longitudinal section the inner surface of the quartz glass crucible between the inner surface of at least the start line and ingot impression impression end line of the silicon melt surface is in a shape the waveform ( ), depth : 0.5mm~2mm, width : 10mm~100mm of the multi-stage consisting of a ring groove ( ) ring (ring) to have a fluted surface . ; quartz crucible and the outer layer , inner layer, a ring groove
机译:高纯度硅单晶锭模压石英玻璃坩埚的直径(),气泡含量:大于等于1%且小于10%,纯度:纯度大于或等于99.99%,非晶硅玻璃外层,气泡含量纯度不超过0.6%:作为高纯石英玻璃坩埚,用于压印,纵向的大直径硅单晶锭,其层状结构为高纯度无定形石英玻璃内层的99%内层中的两个或多个在硅熔液表面的至少起始线的内表面和铸锭压痕压制终点线之间的内表面截取石英玻璃坩埚的内表面,其形状为波形(),深度:0.5mm〜2mm,宽度:10mm〜 100毫米的多级环包括一个环形槽()环(ring),以具有凹槽表面。 ;石英坩埚及其外层,内层,环形槽

著录项

  • 公开/公告号KR101104674B1

    专利类型

  • 公开/公告日2012-01-13

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20080119902

  • 发明设计人 시마즈 아츠시;

    申请日2008-11-28

  • 分类号C30B15/12;C30B29/06;

  • 国家 KR

  • 入库时间 2022-08-21 17:08:46

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