NONVOLATILE MEMORY, CAPABLE OF RANDOMLY SELECTING LOCAL BIT-LINES CORRESPONDING TO SELECTED GLOBAL BIT-LINES, AND A METHOD FOR CONTROLLING THE WORD-LINES AND THE BIT-LINES OF THE SAME

摘要

PURPOSE: A nonvolatile memory and a method for controlling the word-lines and the bit-lines of the same are provided to reduce time for a programming operation, a reading operation, or an erasing operation by selecting a local bit-lines corresponding to global bit-lines when the global bit-lines are maintained in an active state.;CONSTITUTION: A memory cell array(110) includes a plurality of memory cells. A column selector(120) is in connection with the memory cell array through bit-lines. A sense amplifying and write driving circuit(130) are in electrical connection with the bit-lines selected by the column selector. A data inputting-outputting circuit(140) exchanges data with the outside. A row decoder(150) is obtained row address from the outside. A column decoder(170) is obtained column address from the outside.;COPYRIGHT KIPO 2011