High density and low power nonvolatile FeRAM with non-driven plate and selected driven bit-line scheme

摘要

We have successfully developed high density and low power embedded 1Mbit FeRAM. Low operating voltage of 1.5V with ferroelectric capacitor which operates at 0.75V was realized by using technology of (1) non-driven plate scheme with non-refresh operation and (2) selected driven bit-line scheme. The memory core size is reduced down to 53% and the power consumption is reduced to approximately one-fiftieth compared with those of the conventional scheme.