High-speed and low-power FeRAM utilising merged BL/PL array architecture with twin-bitline-driven scheme

摘要

A novel design method for nonvolatile ferroelectric random access memory (FeRAM) using a merged bitline(BL)/plateline(PL) array architecture with a twin bitline-driven scheme is proposed. This method is effective in improving the FeRAM performance and reduces the power consumption. A 128 Kbit FeRAM prototype applying the proposed circuitry is implemented. The chip size, access time and memory array power dissipation are reduced to about 87, 44 and 15.8%, respectively, in comparison with those of conventional FeRAM.