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Programmable High-Speed and Low-power Mode FPGA Memory with Configurable Floating Bitlines Scheme

机译:具有可配置浮动位线方案的可编程高速和低功耗模式FPGA存储器

摘要

A method for operating an SRAM of an FPGA in a high or low-power mode includes a CRAM of the FPGA storing control bits for controlling whether pages of the SRAM operate in the high or low-power mode. A control circuit of the FPGA uses the control bits, a system clock signal, and address for the pages to determine whether to operate the pages in the high or low-power mode and to control the timing for precharging and tristating read bitlines of the pages for the high and low-power modes. In the high-power mode the read bitlines are precharged longer than in the low-power mode, and in the high-power mode the read bitlines are tristated less than in the low-power mode. Precharging the read bitlines for a lesser time in the low-power mode reduces DC leakage current in the lower power mode compared to the high-power mode.
机译:一种用于以高功率或低功率模式操作FPGA的SRAM的方法,包括FPGA的CRAM,其存储用于控制SRAM的页面以高功率或低功率模式操作的控制位。 FPGA的控制电路使用这些页面的控制位,系统时钟信号和地址来确定是在高功率还是低功耗模式下运行页面,并控制对页面的读取位线进行预充电和三态化的时序适用于高功率和低功率模式。在高功率模式下,读取位线的预充电时间比在低功率模式下更长,在高功率模式下,读取位线的三态状态比低功率模式下的状态低。与高功率模式相比,在低功率模式下为读位线预充电的时间更少,从而降低了低功率模式下的直流泄漏电流。

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