A nonvolatile memory device using traps formed in ????? by ???? ion implantation as charge storage levels and its fabrication method

摘要

PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to control the concentration of a trap by utilizing the discontinuous and deep trap level as the charge storage level with injection of the AlO ion into Al2O5. CONSTITUTION: A silicon oxide film is formed on a silicon substrate through a thermal oxidation of surface of the silicon substrate(S2). The aluminum oxide layer is formed on the silicon oxide layer(S3). The AlO ion is inserted within the aluminum oxide layer(S4). The aluminum electrode is formed on the aluminum oxide layer(S5).