NONVOLATILE MEMORY DEVICE USING AN IMPURITY TRAP FORMED BY A METAL DOPING AS A CHARGE STORAGE LEVEL AND A MANUFACTURING METHOD THEREOF

摘要

A non-volatile memory device using the impurity trap formed by the metal doping and a manufacturing method thereof are provided to heighten the reliability of device by forming the trap into the atomic unit. A memory device including an ion-implanted alumina layer(16) are rapidly and thermally processed. The aluminum is deposited to use the memory device which is rapidly thermally processed as an electrode(18). A silicon oxide film is deposited by the thickness of 5nm by the thermal deposition on the p-type silicon substrate(12). The alumina layer is deposited by 40nm thickness on the silicon oxide film through the method for atomic layer deposition. The layer generated by the ion-implanted metal(15) is used as the charge storage level.