METAL WIRING OF A SEMICONDUCTOR DEVICE AND A METHOD FOR FORMING THE SAME, CAPABLE OF PREVENTING THE MATERIAL MIGRATION PHENOMENON OF COPPER

摘要

PURPOSE: The metal wiring of a semiconductor device and a method for forming the same are provided to constantly maintain the resistance of copper by forming thin copper metal wiring around a contact.;CONSTITUTION: A first interlayer insulating film(11a) is formed on a semiconductor substrate(10). A first contact is formed on the first interlayer insulating film. The first metal wiring layer(16) is formed on the upper side of the first interlayer insulating film and the first contact. The first metal wiring layer is formed surround the upper side and the lateral side of the first contact. A second contact is formed on the upper side of the first metal wiring layer.;COPYRIGHT KIPO 2011