FORMING METHOD OF METAL WIRING FILM OF THE SEMICONDUCTOR DEVICE PREVENTING THE LIFTING PHENOMENON OF THE METAL WIRING FILM BY THE SUBSEQUENT PROCESSES

摘要

PURPOSE: The forming method of metal wiring film of the semiconductor device forms the support insulating layer pattern of the width biging than the trench width of the insulating layer in which the metal wiring film pattern is arranged on the top portion of dielectric layer.;CONSTITUTION: The insulating layer(220) is formed on the semiconductor substrate(210). The trench(224) of the constant depth is formed in the upper certain area of the insulating layer. The trench inside crowds with the metal wiring film pattern(232). The support insulating layer pattern(302) is formed on the top of the insulating layer.;COPYRIGHT KIPO 2011