METAL INTERCONNECTION WIRE OF A SEMICONDUCTOR DEVICE, CAPABLE OF PREVENTING THE WIRING BREAK DUE TO ELECTROMIGRATION, AND A FORMING METHOD THEREOF

摘要

PURPOSE: A metal interconnection wire of a semiconductor device and a forming method thereof are provided to extend the lifespan of a device and improve the electric property of a device.;CONSTITUTION: A metal wiring(130) has a first end and a second end. A via is electrically connected to the metal wiring. A non-active part is extended from the first end and includes a void. The flow of a current faces the first end from the second end. A current does not flow in the non-active part.;COPYRIGHT KIPO 2011