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RESIST COMPOSITION AND A METHOD FOR FORMING A RESIST PATTERN, CAPABLE OF OBTAINING THE SUPERIOR LITHOGRAPHY CHARACTERISTIC

机译:能够获得高级光刻特征的抗蚀剂组合物和形成抗蚀剂图案的方法

摘要

PURPOSE: A resist composition and a method for forming a resist pattern are provided to secure the quality of the resist pattern.;CONSTITUTION: A resist composition includes a component, an acid generating component, a nitrogen-contained organic compound. The solubility of the component with respect to an alkaline developing agent is variable by the action of acid. The acid generating component generates acid by an exposure process. The nitrogen-contained organic compound is represented by a general formula d1. In the general formula d1, R20 represents a methylene group, ethylene group, oxygen atom, or -C(CH_3)_2-, R21 represents a hydrogen atom or an organic group, and R22 represents an alkoxy group, an alkoxycarbonyloxy group, a hydroxyl group, a halogen atom, -C(=O)-O-R23, -C(=O)-NR-R23, or a carboxyl group.;COPYRIGHT KIPO 2011
机译:目的:提供一种抗蚀剂组合物和形成抗蚀剂图案的方法以确保抗蚀剂图案的质量。组成:抗蚀剂组合物包括组分,产酸组分,含氮有机化合物。组分相对于碱性显影剂的溶解度可通过酸的作用而变化。产酸组分通过曝光过程产生酸。含氮有机化合物由通式d1表示。在通式d1中,R20代表亚甲基,亚乙基,氧原子或-C(CH_3)_2-,R21代表氢原子或有机基团,并且R22代表烷氧基,烷氧基羰氧基,羟基卤素原子,-C(= O)-O-R23,-C(= O)-NR-R23或羧基。; COPYRIGHT KIPO 2011

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