PATTERN FORMING METHOD AND A DEVELOPER CAPABLE OF FORMING RESIST PATTERNS OF SUPERIOR LITHOGRAPHY CHARACTERISTIC

摘要

PURPOSE: A pattern forming method and a developer is provided to suppress the reduction of a film in the process of forming resist patterns and to reduce the line width roughness of the resist patterns.;CONSTITUTION: A pattern forming method includes the following steps: a resist film is formed on a substrate using a photoresist composition; the resist film is exposed; and the exposed resist film is developed using a negative type developer. The photoresist composition includes a polymer and a radiation-sensitive acid generator. The polymer includes a structural unit with an acid-liable group which is dissociated by the action of acid, and the dissolution of the polymer to the developer is reduced by the dissociation of the acid-liable group. The developer contains a nitrogen-containing compound which is represented by chemical formula 1.;COPYRIGHT KIPO 2013