首页> 外文OA文献 >Computational Study of Pattern Formation for Chemically Amplified Resists in Extreme Ultraviolet Lithography

【2h】

Computational Study of Pattern Formation for Chemically Amplified Resists in Extreme Ultraviolet Lithography

机译：极端紫外光刻化学放大抗蚀剂图案形成的计算研究

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Masaaki Yasuda; Masanori Koyama; Kosai Fukunari; Masamitsu Shirai; Hiroaki Kawata; Yoshihiko Hirai;
展开▼
作者单位

展开▼
年度 2019
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Computational Study of Pattern Formation for Chemically Amplified Resists in Extreme Ultraviolet Lithography [J] . Yasuda Masaaki, Koyama Masanori, Fukunari Kosei, Journal of Photopolymer Science and Technology . 2019,第2期

机译：极端紫外光刻中化学放大抗蚀剂图案形成的计算研究
2. Computational Study of Pattern Formation for Chemically Amplified Resists in Extreme Ultraviolet Lithography [J] . Masaaki Yasuda, Masanori Koyama, Kosai Fukunari, Journal of Photopolymer Science and Technology . 2019,第2期

机译：极端紫外线平版印刷中化学放大抗蚀剂图案形成的计算研究
3. Stochastic Simulation of Pattern Formation for Negative-Type Chemically Amplified Resists in Extreme Ultraviolet Lithography [J] . Masaaki Yasuda, Masanori Koyama, Kyohei Imai, Journal of Photopolymer Science and Technology . 2020,第1期

机译：极端紫外光刻中负型化学放大抗蚀剂图案形成的随机仿真
4. Study on stochastic phenomena induced in chemically amplified poly(4-hydroxystyrene-co-t-butyl methacrylate) resist (high-performance model resist for extreme ultraviolet lithography) [C] . Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani Advances in Patterning Materials and Processes XXXIII . 2016

机译：化学放大的聚（4-羟基苯乙烯-甲基丙烯酸叔丁酯）抗蚀剂（用于极端紫外光刻的高性能模型抗蚀剂）引起的随机现象的研究
5. Surface chemistry study of gallium arsenide wafers during chemically amplified resist patterning and resist studies with fluorescence. [D] . Lu, Bing. 2000

机译：砷化镓晶片的表面化学研究在化学放大的抗蚀剂构图过程中进行，并通过荧光进行抗蚀剂研究。
6. Trehalose Glycopolymer Resists Allow Direct Writing of Protein Patterns by Electron-Beam Lithography [O] . Erhan Bat, Juneyoung Lee, Uland Y. Lau, -1

机译：海藻糖糖醇抗性可通过电子束光刻直接写入蛋白质图案
7. Relationship between Resolution Blur and Stochastic Defect of Chemically Amplified Resists Used for Extreme Ultraviolet Lithography [O] . Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani 2019

机译：用于极端紫外光刻的分辨率模糊与化学放大抗蚀剂随机缺陷的关系
8. Update on the SEMATECH 0.5 NA Extreme-Ultraviolet Lithography (EUVL) Micro-Field Exposure Tool (MET). Conference: SPIE - Extreme Ultraviolet (EUV) Lithography V, San Jose, CA, February 23, 2014; Related Information: Journal.Publication Date: 90481M. [R] . Cummings, K., Ashworth, D., Bremer, M., 2014

机译：更新sEmaTECH 0.5 Na极紫外光刻（EUVL）微场曝光工具（mET）。会议：spIE - 极紫外（EUV）光刻V，加利福尼亚州圣何塞，2014年2月23日;相关信息：Journal.publication日期：90481m。

Computational Study of Pattern Formation for Chemically Amplified Resists in Extreme Ultraviolet Lithography

著录项

引文网络

相似文献

相关主题

期刊订阅