NANO LIGHT EMITTING DIODES OR MICRO LIGHT EMITTING DIODES FABRICATED BY USING ION IMPLANTATION AND ITS FABRICATING METHOD, CAPABLE OF PREVENTING LIGHT LOSS DUE TO TOTAL INTERNAL REFLECTION

摘要

PURPOSE: Nano light emitting diodes or micro light emitting diodes fabricated by using ion implantation and its fabricating method are provided to implement a nano light emitting diode by forming an insulating layer through ion implantation and plasma doping.;CONSTITUTION: In nano light emitting diodes or micro light emitting diodes fabricated by using ion implantation and its fabricating method, a nano structure is formed in an active area. The nano mask or a micro mask is formed in p-GaN. Ion implantation or plasma doping is performed in p-GaN by using reactive ions. A transparent electrode layer is formed on the p-GaN layer which is formed through the ion implantation or the plasma doping. An n electrode and a p electrode are formed on the transparent electrode layer.;COPYRIGHT KIPO 2012