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LIQUID CRYSTAL DISPLAY DEVICE HAVING ESD PROTECTION CIRCUIT AND METHOD FOR MANUFACTURING THE SAME

机译:具有ESD保护电路的液晶显示装置及其制造方法

摘要

source electrode and a drain electrode on the silicon oxide film 31, each of which the ITO film 32, a transparent electrode , has the metal film 33 formed on the ITO film 32 . Without any source electrode and a drain electrode region, the gap 35 is formed between the source electrode and the drain electrode. Silicon nitride film 34 ( gate insulating film) is formed on the source electrode and the drain electrode and the gap (35) . Silicon nitride film 34 has a relatively large first region having a thickness (D 1 ) and a second region with a relatively small thickness (D 2 ). Region of the silicon nitride film (34) (D 2 ) is provided with a MIM structure . Gate bus layer 36 is formed on the silicon nitride film 34 . MIM structure is formed in the second regions (D 2 ).
机译:氧化硅膜31上的源电极和漏电极均具有ITO膜32(透明电极)具有形成在ITO膜32上的金属膜33。在没有任何源电极和漏电极区域的情况下,在源电极和漏电极之间形成间隙35。在源极和漏极以及间隙(35)上形成氮化硅膜34(栅极绝缘膜)。氮化硅膜34具有较大的第一区域和第二区域,第一区域的厚度为(D 1 ),第二区域的厚度为(D 2 )。氮化硅膜(34)的区域(D 2 )具有MIM结构。栅极总线层36形成在氮化硅膜34上。 MIM结构形成在第二区域(D 2 )中。

著录项

  • 公开/公告号KR101012777B1

    专利类型

  • 公开/公告日2011-02-08

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20067013181

  • 发明设计人 타나카 히데오;

    申请日2004-12-14

  • 分类号G02F1/136;G02F1/133;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:39

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