- UV-BLOCKING LAYER FOR REDUCING UV-INDUCED CHARGING OF SONOS DUAL-BIT FLASH MEMORY DEVICES IN BEOL PROCESSING

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, particularly to reduce ultraviolet (UV) induced charges in back-end-of-line (BEOL) processing devices. A SONOS flash memory device comprising an ultraviolet radiation shielding layer and a method of manufacturing the same.;The SONOS flash memory device 10, 50 according to the present invention comprises a SONOS flash memory cell 24 and at least one ultraviolet protective layer 38, 46, 48, and / or 52 formed of an ultraviolet blocking material. It is characterized by being configured.;A method of protecting a SONOS flash memory cell from generation of ultraviolet induced charges according to the present invention comprises the steps of: manufacturing a SONOS flash memory cell in a semiconductor device; And depositing.;SONOS Flash Memory Cells, UV Protection, Semiconductor