Performance in transistors with a metal gate stack with a large ε by means of an early implantation of the extension regions

摘要

In complex transistor cells, the integrity of the sensitive gate materials is improved, while at the same time, the lateral spacing of enlargement regions is reduced. For this purpose, at least a part of the implanted extension regions in an early process step, i.e. in the presence of a protection coating material which, according to the production of the extension regions is structured in a protective spacer structure for preserving the integrity of the sensitive gate electrodes structure is used.