首页> 外国专利> CHROMELESS PHASE SHIFT MASK AND METHOD FOR PRODUCING CHROMELESS PHASE SHIFT MASK

CHROMELESS PHASE SHIFT MASK AND METHOD FOR PRODUCING CHROMELESS PHASE SHIFT MASK

机译:无色相移面具和生产无色相移面具的方法

摘要

PROBLEM TO BE SOLVED: To provide a chromeless phase mask and a method for producing the chromeless phase mask that can improve CD performance significantly and can keep a light-shielding film on a non-engraved area with high accuracy.;SOLUTION: A chromeless phase shift mask includes a substrate that is transmissive to exposure light, and that has an engraved portion, where the substrate is engraved, and a non-engraved portion, where the substrate is not engraved, whereby the phase difference between light transmitted through the engraved portion and light transmitted through the non-engraved portion is controlled. A light-shielding film formed on the substrate includes: a film A that is formed on the substrate, where the transmittance and the phase shifting amount thereof with regard to the exposure light are controlled, and that is made of a material that can be etched by an etching process using an etching gas consisting essentially of a chlorine-based gas; and a film B that is formed on the film A, where the transmittance thereof with regard to the exposure light are controlled, and that is made of a material that can be etched by an etching process using an etching gas consisting essentially of a fluorine-based gas.;COPYRIGHT: (C)2012,JPO&INPIT
机译:要解决的问题:提供一种无铬相位掩模和一种生产无铬相位掩模的方法,该方法可以显着改善CD性能,并且可以在非雕刻区域上高精度地保持遮光膜。移位掩模包括透射曝光光的基板,并具有雕刻该基板的雕刻部分和未雕刻该基板的未雕刻部分,从而透射通过雕刻部分的光之间的相位差。并且,控制透过非雕刻部的光。形成在基板上的遮光膜包括:膜A,其形成在基板上,其中该膜A相对于曝光光的透射率和相移量被控制,并且由能够蚀刻的材料制成。通过使用基本上由氯基气体组成的蚀刻气体的蚀刻工艺;以及形成在膜A上的膜B,其控制相对于曝光的透射率,并且由可以通过使用基本上由氟构成的蚀刻气体通过蚀刻工艺蚀刻的材料制成。气;版权:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2012078553A

    专利类型

  • 公开/公告日2012-04-19

    原文格式PDF

  • 申请/专利权人 TOPPAN PRINTING CO LTD;

    申请/专利号JP20100223600

  • 发明设计人 KOJIMA YOSUKE;

    申请日2010-10-01

  • 分类号G03F1/68;

  • 国家 JP

  • 入库时间 2022-08-21 17:42:17

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