Operating method of the local pressure -Ko beam epitaxy device and molecular beam epitaxy equipment

摘要

PROBLEM TO BE SOLVED: To grow an InN crystal at a higher substrate temperature while suppressing nitrogen dissociation when growing the InN crystal on the substrate by means of a molecular-beam epitaxial growth method, so as to solve problems of quality degradation of the crystal in case of a low substrate temperature and the nitrogen dissociation in case of a high substrate temperature.;SOLUTION: The InN film is grown on the substrate at a higher substrate temperature while suppressing the nitrogen dissociation by blowing a gas on the substrate surface. The gas is blown out from such a gas nozzle that does not block the passage of a molecular-beam. If the gas is heated outside or inside a vacuum chamber and then blown on the substrate, it is also possible to prevent dropping of atoms of the composition on a component surface and to control a migration distance.;COPYRIGHT: (C)2010,JPO&INPIT