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THROUGH SILICON VIA PROCESSING TECHNIQUES FOR LATERAL DOUBLE-DIFFUSED MOSFETS
THROUGH SILICON VIA PROCESSING TECHNIQUES FOR LATERAL DOUBLE-DIFFUSED MOSFETS
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机译:硅通过横向双扩散MOSFET的加工技术
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摘要
The present invention features a field effect transistor forming on a semiconductor substrate having formed thereon gate, source and drain regions, with said gate region having a lateral gate channel. A plurality of spaced-apart trenches each having an electrically conductive plug formed therein in electrical communication with said gate, source and drain regions, with said trenches extend from a back surface of said semiconductor substrate to a controlled depth. A trench contact shorts the source region and a body region. A source contact is in electrical communication with said source region and a drain contact in electrical communication with said drain region, with said source and drain contacts being disposed on opposite sides of said gate channel.
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