Mobility enhancement techniques for Ge and GeSn MOSFETs

摘要

The performance enhancement of conventional Si MOSFETs through device scaling is becoming increasingly difficult.The application of high mobility channel materials is one of the most promising solutions to overcome the bottleneck.The Ge and GeSn channels attract a lot of interest as the alternative channel materials,not only because of the high carrier mobility but also the superior compatibility with typical Si CMOS technology.In this paper,the recent progress of high mobility Ge and GeSn MOSFETs has been investigated,providing feasible approaches to improve the performance of Ge and GeSn devices for future CMOS technologies.