Through silicon via processing method for lateral double-diffused MOSFETs

摘要

The present invention features methods for forming a field effect transistor on a semiconductor substrate having gate, source and drain regions, with the gate region having a lateral gate channel. A plurality of spaced-apart trenches or through semiconductor vias (TSV) each having an electrically conductive plug formed therein in electrical communication with the gate, source and drain regions are configured to lower the resistance of the bottom source. A contact trench is formed adjacent to the source region and shorts the source region and a body region. A source contact is in electrical communication with the source region; and a drain contact in electrical communication with the drain region, with the source and drain contacts being disposed on opposite sides of the lateral gate channel.