Complete 3D-Reduced Surface Field Superjunction Lateral Double-Diffused MOSFET Breaking Silicon Limit

摘要

A new superjunction lateral double-diffused MOS with the semi-insulating poly silicon (SIPOS SJ-LDMOS) has been proposed in this letter, for the first time, with the complete three-dimensional reduced surface field (3D-RESURF). The SIPOS SJ-LDMOS along the three dimensions are subject to the electric field modulation, which achieves the complete 3D-RESURF effect. The simulated breakdown voltage (BV) for the unit length of the drift region is improved to 19.4 . The drift region with the high concentration compared with the conventional LDMOS can be depleted completely in the OFF-state to obtain the high BV. Moreover, the majority carrier accumulation can be formed to further decrease (specific on resistance) during the ON-state operation. Three effects have been combined to SIPOS SJ-LDMOS for the superjunction ideal, electric field modulation and the majority carrier accumulation by SIPOS. The tradeoff between the BV and has been improved to break through the silicon limit. The results show that the experimental of SIPOS SJ-LDMOS is 18 with the tested BV of 376 V, which is less than that of 31.1 for the -buffer SJ-LDMOS with the simulated BV of 287 V, and far less than 71.8 for the conventional LDMOS with the simulated BV of 254 V for the same drift region length of 20 .