首页>
外国专利>
Trench MOS Barrier Schottky Rectifier With A Planar Surface Using CMP Techniques
Trench MOS Barrier Schottky Rectifier With A Planar Surface Using CMP Techniques
展开▼
机译:使用CMP技术的平面型Trench MOS势垒肖特基整流器
展开▼
页面导航
摘要
著录项
相似文献
摘要
High Efficiency Diode (HED) rectifiers with improved performance including reduced reverse leakage current, reliable solderability properties, and higher manufacturing yields are fabricated by minimizing topography variation at various stages of fabrication. Variations in the topography are minimized by using a CMP process to planarize the HED rectifier after the field oxide, polysilicon and/or solderable top metal are formed.
展开▼