首页> 外国专利> MANUFACTURING METHOD OF A PLASMA PROCESSING APPARATUS AND A SEMICONDUCTOR DEVICE WHICH PLANS PRODUCTIVITY INCREASING BY IMPROVING YIELD

MANUFACTURING METHOD OF A PLASMA PROCESSING APPARATUS AND A SEMICONDUCTOR DEVICE WHICH PLANS PRODUCTIVITY INCREASING BY IMPROVING YIELD

机译:通过提高产量来提高生产率的等离子处理装置和半导体装置的制造方法

摘要

PURPOSE: The manufacturing method of a plasma processing apparatus and a semiconductor device are provided to prevent the generation of discharge between a semiconductor wafer and the base material of a placement table or neighboring structures.;CONSTITUTION: A placement table(2) is installed within a process chamber. The placement table comprises a base material(2a) consisting of a conductive metal. An upper electrode(6a) is arranged in order to face with a lower electrode. A lifter pin(210) is installed on the top of a support stand and supports a processed substrate(W). The lifter pin comprises pin main body part(211) and a lid part(212) having external diameter which is bigger than external diameter of the pin main body part.;COPYRIGHT KIPO 2012
机译:目的:提供等离子体处理设备和半导体器件的制造方法,以防止在半导体晶片和放置台或邻近结构的基材之间产生放电。组成:放置台(2)安装在内部处理室。放置台包括由导电金属组成的基材(2a)。布置上电极(6a)以便面对下电极。升降销(210)安装在支撑架的顶部,并支撑处理后的基板(W)。升降销包括销主体部分(211)和盖部(212),该盖子部分的外径大于销主体部分的外径。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20110125188A

    专利类型

  • 公开/公告日2011-11-18

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LIMITED;

    申请/专利号KR20110044534

  • 发明设计人 YAMAMOTO TAKASHI;

    申请日2011-05-12

  • 分类号H01L21/3065;H01L21/205;H01L21/687;

  • 国家 KR

  • 入库时间 2022-08-21 17:11:40

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号