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SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING AN INTERNAL CIRCUIT AND AN ELECTROSTATIC PROTECTION CIRCUIT CAPABLE OF REDUCING THE NUMBER OF ELECTROSTATIC PROTECTION DEVICES

机译:半导体集成电路,包括内部电路和可减少静电防护装置数量的静电防护电路

摘要

PURPOSE: A semiconductor integrated circuit including an internal circuit and an electrostatic protection circuit is provided to reduce the number of electrostatic protection circuits by increasing the separation part of a power voltage and a ground voltage.;CONSTITUTION: A semiconductor integrated circuit includes first to third operation voltage supply terminals, first to third internal circuits(11,12,13), first to third electrostatic protection circuits(41,42,43), and a connection center trap. The first to third internal circuits are operated with first to third operation voltages of the first to third operation voltage supply terminals. First to third electrostatic protection circuits are connected between the first to third operation voltage supply terminals and the connection center trap.;COPYRIGHT KIPO 2012
机译:目的:提供一种包括内部电路和静电保护电路的半导体集成电路,以通过增加电源电压和地电压的分离部分来减少静电保护电路的数量。;构成:一种半导体集成电路,包括第一至第三工作电压供给端子,第一至第三内部电路(11、12、13),第一至第三静电保护电路(41、42、43)和连接中心阱。第一至第三内部电路利用第一至第三操作电压供给端子的第一至第三操作电压进行操作。第一至第三静电保护电路连接在第一至第三工作电压供应端子和连接中心阱之间。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20110137242A

    专利类型

  • 公开/公告日2011-12-22

    原文格式PDF

  • 申请/专利权人 RENESAS ELECTRONICS CORPORATION;

    申请/专利号KR20110050806

  • 发明设计人 HAYASHI HIROFUMI;

    申请日2011-05-27

  • 分类号G11C5/14;

  • 国家 KR

  • 入库时间 2022-08-21 17:11:15

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