high-quality homo epitaxial gallium nitride slopes US trial

摘要

In the off- cut angle of the present invention is from about 0.2 to 10 degrees , & 0001 & In the direction & 10-10 & And & 11-20 & as towards the direction selected from the group consisting notably the off -cut is (0001) - containing a surface nitride , that is, relates to a GaN substrate , wherein the surface is 50 x less than 1 nm 50 ² , as measured by the AFM scan RMS roughness and 3E6 cm ^-2 has a dislocation density of less. The substrate is viewed (boule) or cut -off corresponding to the blank wafer slicing , corresponding US heteroepitaxial substrate surface , that is, is formed by the growth of the wrapping or on the off -cut sapphire substrate body . The substrate is usually used for - homo epitaxial deposition in the fabrication of nitride -based microelectronic and optoelectronic devices .