Homo-and Hetero-epitaxial GaSb Layers by MOCVD

摘要

Metalorganic chemical vapor deposition（MOCVD） growth of homo-and hetero-epitaxial GaSb has beeninvestigated,by using trimethylgallium（TMGa）and trimetbylantimony（TMSb）as source materials on n-typeGaSb and semi-insulating GaAs substrates.The influence of Ⅲ/Ⅴ ratio on the growth of GaSb was studiedin detail and it was found that the Ⅲ/Ⅴ ratio range proper for good quality epi-layers is narrow.The carriermobility and concentration of undoped GaSb epi-layers are about 600 cm2/Ⅴ·s and 2～4×1016cm-3atroom temperature,respectively.The low temperature（77K）mobility is about 5 times of the roomtemperature’s one.The low temperature（11K）photoluminescence（PL）spectrum and the temperature depen-dence of PL spectrum were investigated.The red shift of bound exciton with temperature was observed.