Raman measurements and stress analysis in gallium ion-implanted gallium nitride epitaxial layers on sapphire

摘要

In this article, we estimate hydrostatic stress developed in gallium ion-implanted gallium nitride epitaxial layers using Raman measurements. We have calculated deformation potential constants for E_2(high) mode in these epi-layers. The presence of a polar phonon-plasmon coupling in these systems has also been demonstrated. In as-implanted samples, with an increase in implantation fluence, we have observed disorder-activated Raman scattering.