DRIVE CURRENT ENHANCEMENT IN TRI-GATE MOSFETS BY INTRODUCTION OF COMPRESSIVE METAL GATE STRESS USING ION IMPLANTATION

摘要

A semiconductor device includes a pin and a metal gate film. Pin is formed on the surface of the semiconductor material . Formed on the metal gate film and the pin comprises a metal ion that is injected in the gate layer to form the compressive stress in the metal gate . In an exemplary embodiment, a surface of the semiconductor material comprises a (100) crystal lattice orientation , lt is the orientation of the pin relative to the crystal lattice of the semiconductor & ; 100 & Follow the direction . In another exemplary embodiment, a surface of the semiconductor material comprises a (100) crystal lattice orientation , the orientation of the pin relative to the crystal lattice lt & semiconductor ; 110 & Follow the direction . Pin includes an out-of-plane compression caused by the compressive stress in the metal gate layer .