DRIVE CURRENT ENHANCEMENT IN TRI-GATE MOSFETS BY INTRODUCTION OF COMPRESSIVE METAL GATE STRESS USING ION IMPLANTATION

摘要

A semiconductor device comprises a fin and a metal gate film. The fin is formed on a surface of a semiconductor material. The metal gate film formed on the fin and comprises ions implanted in the metal gate film to form a compressive stress within the metal gate. In one exemplary embodiment, the surface of the semiconductor material comprises a (100) crystalline lattice orientation, and an orientation of the fin is along a 100 direction with respect to the crystalline lattice of the semiconductor. In another exemplary embodiment, the surface of the semiconductor material comprises a (100) crystalline lattice orientation, and the orientation of the fin is along a 110 direction with respect to the crystalline lattice of the semiconductor. The fin comprises an out-of-plane compression that is generated by the compressive stress within the metal gate film.