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SEMICONDUCTOR MEMORY DEVICE WHICH RELIABLY SENSES DATA STORED IN A MEMORY CELL

机译:可靠地存储在存储单元中的数据的半导体存储设备

摘要

PURPOSE: A semiconductor memory device is provided to sufficiently secure margin by adaptively increasing or decreasing a level of a reference voltage according to a PVT variation.;CONSTITUTION: A data sensing unit(31,37) senses an output voltage generated by a sensing current supplied to a resistive memory cell based on a reference voltage and outputs output data corresponding to the sensing result. A reference voltage generating unit(32,36) includes a dummy memory cell which has a first resistive device with a first resistance and a second resistive device with a second resistance and outputs a voltage generated by the sensing current supplied to the dummy memory cell as the reference voltage.;COPYRIGHT KIPO 2013
机译:目的:提供一种半导体存储器件,以通过根据PVT变化自适应地增加或减少参考电压的电平来充分保证裕度;组成:数据感测单元(31,37)感测由感测电流产生的输出电压根据参考电压将其提供给电阻存储单元,并输出与感测结果相对应的输出数据。参考电压产生单元(32,36)包括虚拟存储单元,该虚拟存储单元具有具有第一电阻的第一电阻器件和具有第二电阻的第二电阻器件,并输出由提供给虚拟存储单元的感测电流产生的电压作为参考电压。; COPYRIGHT KIPO 2013

著录项

  • 公开/公告号KR20120112062A

    专利类型

  • 公开/公告日2012-10-11

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号KR20120029435

  • 发明设计人 KWON DAE HAN;SONG TAEK SANG;

    申请日2012-03-22

  • 分类号G11C13/00;G11C13/02;G11C16/26;

  • 国家 KR

  • 入库时间 2022-08-21 17:09:02

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