PURPOSE: A semiconductor memory device is provided to sufficiently secure margin by adaptively increasing or decreasing a level of a reference voltage according to a PVT variation.;CONSTITUTION: A data sensing unit(31,37) senses an output voltage generated by a sensing current supplied to a resistive memory cell based on a reference voltage and outputs output data corresponding to the sensing result. A reference voltage generating unit(32,36) includes a dummy memory cell which has a first resistive device with a first resistance and a second resistive device with a second resistance and outputs a voltage generated by the sensing current supplied to the dummy memory cell as the reference voltage.;COPYRIGHT KIPO 2013
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