SEMICONDUCTOR DEVICE INCLUDING A BLOCK STATE CHECK CELL STORING THE NUMBER OF BITS OF DATA WRITTEN IN MEMORY CELLS, MEMORY DATA READING METHOD BASED ON THE NUMBER OF BITS OF DATA WRITTEN IN MEMORY CELLS, AND MEMORY DATA PROGRAMMING METHOD STORING THE NUMBER OF BITS OF DATA WRITTEN IN MEMORY CELLS

摘要

A non-volatile memory device and operation method thereof is provided to improve a speed of a read operation by being no need to performing a read operation about all bits of memory cells. A non-volatile memory device comprises a plurality of memory cells(MC1~MCn), a memory block(MB11~MB4n), and a controller. The memory cells stores a respective date. The memory block respectively includes a block state confirmation cell storing information about the number of bit filled in the memory cell. The controller reads a data from the memory block to a bit stored in the block state confirmation cell.