A Novel PHINES Flash Memory Cell with Low power Program/Erase, Small Pitch, Two-Bits-Per-Cell for Data Storage Applications

摘要

A novel programming by hot-hole injection nitride electron storage (PHINES) Flash memory technology is developed. The memory bit size of 0.046 μm{sup}2 is fabricated based on 0.13-μm technology. PHINES cell uses a nitride trapping storage cell structure. Fowler-Nordheim (FN) injection is performed to raise V{sub}t in erase while programming is done by lowering a local V{sub}t through band-to-band tunneling-induced hot hole (BTBT HH) injection. Two-bits-per-cell feasibility, low-power and high-speed program/erase, good endurance and data retentivity make it a promising candidate for Flash EEPROM technology in gigabit era applications.