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Transistor arrangement with temperature compensation and method for temperature compensation

机译:具有温度补偿的晶体管装置和温度补偿方法

摘要

Transistor arrangement with temperature compensation, comprising– at least one transistor (1) with a control input, with a controlled path and with at least one adjustable geometry parameters,– a means for temperature measurement, adapted for the delivery of a temperature-dependent signal,– a control unit (2), the said means for temperature measurement with the transistor (1) is coupled to the adjustment of the at least one geometry parameter of the transistor (1) as a function of the temperature-dependent signal, wherein with the control unit (2) a comparator (4) is coupled to a first input for feeding a temperature-independent signal and a second input for coupling with the means for measuring the temperature (8), and– a control circuit (2, 4, 10) is provided, comprising a further transistor (10) with at least one adjustable geometry parameters, for the adjustment of the further transistor (10) with the control unit (2) and is coupled with the second input of the comparator (4) is coupled, at the first input of the comparator (4) a means for..
机译:具有温度补偿的晶体管装置,包括–至少一个带控制输入,受控路径和至少一个可调几何参数的晶体管(1),–一种温度测量装置,适合于传递与温度有关的信号在一个控制单元(2)中,所述用于利用晶体管(1)进行温度测量的装置与根据温度相关信号对晶体管(1)的至少一个几何参数的调节耦合,其中通过控制单元(2),比较器(4)耦合到用于馈送与温度无关的信号的第一输入端和用于与温度测量装置(8)耦合的第二输入端,以及–控制电路(2,提供图4、10),其包括具有至少一个可调几何参数的另一晶体管(10),用于利用控制单元(2)来调节另一晶体管(10),并与比较器的第二输入端(10)耦合。 4)是在比较器(4)的第一个输入端上

著录项

  • 公开/公告号DE102004002007B4

    专利类型

  • 公开/公告日2012-08-02

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20041002007

  • 发明设计人 OEHM JUERGEN PROF.DR.;

    申请日2004-01-14

  • 分类号H01L23/58;G05F3/16;G05F3/26;H03F1/30;H03F3/45;

  • 国家 DE

  • 入库时间 2022-08-21 17:05:43

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