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METHOD OF EVALUATING TRENCH AVERAGE DEPTH AND SWITCHING CHARACTERISTICS OF TRENCH GATE TYPE MOS SEMICONDUCTOR DEVICE, AND METHOD OF SELECTING SEMICONDUCTOR CHIP
METHOD OF EVALUATING TRENCH AVERAGE DEPTH AND SWITCHING CHARACTERISTICS OF TRENCH GATE TYPE MOS SEMICONDUCTOR DEVICE, AND METHOD OF SELECTING SEMICONDUCTOR CHIP
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机译:沟槽门型MOS器件的平均平均沟道深度和开关特性的评估方法及芯片的选择方法
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摘要
PROBLEM TO BE SOLVED: To provide a method of evaluating a trench average depth of a trench gate type MOS semiconductor device capable of evaluating and selecting a trench average depth and switching characteristics of a semiconductor chip in a wafer state by non-destruction and by a simple test circuit without using a high-voltage power supply, with respect to a wafer that undergoes a wafer process of the trench gate type MOS semiconductor device.;SOLUTION: After termination of a step of burying a gate electrode 8 via a gate insulating film 7 in a trench 11 provided on a surface side of a semiconductor wafer 21 and a step of forming metal main electrodes 5 and 6 on both principal surfaces, a rectangular pulse voltage is applied from a predetermined negative voltage value to a predetermined positive voltage value, between the gate electrode 8 in a semiconductor chip 10 formed in the semiconductor wafer 21 and the rear face metal electrode 5 to measure a gate charging time A when a voltage reaches the predetermined positive voltage value. A trench average depth of the semiconductor chip 10 corresponding to the measured gate charging time A is calculated from a calibration curve indicating a relation between a known trench average depth and a gate charging time.;COPYRIGHT: (C)2013,JPO&INPIT
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