Overview of Trench Gated MOS-Controlled Bipolar Semiconductor Power Devices

摘要

An overview of the issues related to trench power devices is given. Several structures are examined and compared using numerical simulations. It is shown that, starting with the Power MOSFET, going through the IGBT, and reaching the newest MOS-controlled thyristor structures, the concept of the trench gate has been used as the most efficient way to improve the static performance of a device. The drawbacks related to this gate geometry are also analysed, particularly the negative influence on the transient performance and switching losses.