Power semiconductor device e.g. insulated gate bipolar transistor device, has semiconductor element with drift distance between zone and substrate range, and zone sections with trench structures that are filled with semiconductor material

摘要

The device has a power semiconductor element (1) with a drift distance (5) between a body zone (6) and a substrate range (7), and the distance has drift zones (8) of a conductive type, which provides a current path of the drift distance between the body zone with a conductive type complementary to the former conductive type and the substrate range. Charge compensation zones (9) have charge compensation zone sections stacked one above the other, where the zone sections have trench structures (15, 19, 25) that are filled with a monocrystalline and epitaxial grown semiconductor material (12). An independent claim is also included for a method for production of a power semiconductor element.