Surface etching apparatus for a semiconductor substrate, and a method of manufacturing a semiconductor substrate having uneven shape is formed on the surface using the same

摘要

While using the semiconductor substrate and the gas which causes the exoergic reaction, as the etching gas it designates that it offers the device which etches the corresponding possible semiconductor substrate surface in mass production as topic. In the load lock chamber and below atmospheric pressure from the decompression possible etching chamber and the unloading lock chamber and the aforementioned load lock chamber passing the aforementioned etching chamber, conveying feature and the aforementioned semiconductor substrate in order to convey the tray which stores the semiconductor substrate and/or being the surface etching device of the semiconductor substrate which possesses with the cooling feature which cools the tray to the aforementioned unloading lock chamber, directing to the semiconductor substrate surface which is stored in the aforementioned tray in the aforementioned etching chamber it offers the surface etching device which possesses the multiple nozzles which inject the etching gas.