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Trench generated device structures and design structures for radiofrequency and BiCMOS integrated circuits
Trench generated device structures and design structures for radiofrequency and BiCMOS integrated circuits
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机译:沟槽生成的射频和BiCMOS集成电路的器件结构和设计结构
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摘要
Trench-generated device structures fabricated using a semiconductor-on-insulator (SOI) wafer, design structures embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, as well as methods for fabricating trench-generated device structures. The device structure includes a trench extending through the semiconductor and insulator layers of the SOI wafer and into the underlying semiconductor substrate, and a first doped region in the semiconductor substrate. The doped region, which extends about the trench, has a second conductivity type opposite to the first conductivity type. The device structure further includes a first contact extending from the top surface through the semiconductor and insulator layers to a portion of the semiconductor substrate outside of the doped region, and a second contact extending from the top surface through the semiconductor and insulator layers to the doped region in the semiconductor substrate.
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