Modeling of trench structures in integrated circuits for fast isolation effectiveness assessment

摘要

In this paper, an analytical modeling methodology is proposed for trench structures in integrated circuit substrates. It is based on a modal characterization of the different doping profiles, dealing with trenches as discontinuities transverse to the direction of propagation. Finally, a method for fast isolation effectiveness assessment of a trench integrated in different substrate types is proposed, that includes the effects of mode interaction.