Method of producing P-type nitride based III-V compound semiconductor and method of fabricating semiconductor device using the same

摘要

A nitride based III-V compound semiconductor (12) doped with a p-type impurity is formed on a substrate (11) made from sapphire. The substrate on which the nitride based III-V compound semiconductor (12) has been formed is then placed between a pair of RF electrodes (22, 23), and a radio frequency field is applied between the RF electrodes (22, 23). With this operation, electrons present in the compound semiconductor (12) attack the bonding between the p-type impurity and hydrogen, to cut the bonding. The hydrogen atoms thus dissociated are released from the compound semiconductor (12), to thereby activate the p-type impurity. In this case, it is not required to heat the compound semiconductor by a heater or the like.