首页>
外国专利>
METHOD FOR MACHINING NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR WAFER, PROCESS FOR PRODUCING NITRIDE SEMICONDUCTOR DEVICE, AND NITRIDE SEMICONDUCTOR DEVICE
METHOD FOR MACHINING NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR WAFER, PROCESS FOR PRODUCING NITRIDE SEMICONDUCTOR DEVICE, AND NITRIDE SEMICONDUCTOR DEVICE
展开▼
机译:氮化物半导体晶片的加工方法,氮化物半导体晶片,制造氮化物半导体装置的方法以及氮化物半导体装置
展开▼
页面导航
摘要
著录项
相似文献
摘要
A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100wt%-60wt% #3000-#600 diamond granules and 0wt%-40wt% oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5µm-10µm thick edge process-induced degradation layer.
展开▼