Preparation and Application of Single Wafer Type LPCVD Nitride Films for Semiconductor Devices

摘要

Single wafer type low-pressure chemical vapor deposition (SLPCVD) has attracted much interest as a new deposition method for silicon nitride film at high temperature region(600-8001).SLPCVD can greatly reduce the thermal budget because the process time of SLPCVD is far shorter than that of LPCVD.Thus SLPCVD can reduce undesirable diffusion of dopants in the microelectronic devices,which becomes critical issues to the future devices as the design rule of the devices shrinks.And SLPCVD uses SiH_4 and NH_3 as source gases instead of SiH_2Cl_2 and NH_3 to prevent the formation of NH_4C1 particulates.